Title
Effect of post-annealing on the significant photoresponsivity enhancement of BaSi2 epitaxial films on Si(111)
Author
Yurika Haku, Sho Aonuki, Yudai Yamashita1, Kaoru Toko and Takashi Suemasu
Year
2021
Journal
Applied Physics Express
Abstract
We demonstrated the marked photoresponsivity enhancement of BaSi2 epitaxial films by 5 min post-annealing at 850 °C–1000 °C in contrast to those at 600 °C–800 °C. Post-annealing at 1000 °C increased the photoresponsivity up to 9.0 A W−1 at a wavelength of around 800 nm under a bias voltage of 0.5 V applied between the top and bottom electrodes. The hole concentration decreased monotonously with annealing temperature from 8.3 × 1016 to 5.4 × 1015 cm–3, and the mobility exceeded 1000 cm2 V–1 s–1. The a-axis orientation of the BaSi2 films was significantly deteriorated at temperatures higher than 800 °C.
Instrument
NRS-5100
Keywords
annealing, photoresponsivity, BaSi, Si (111), Raman spectroscopy