Laser-Fabricated Reduced Graphene Oxide Memristors

September 22, 2019

Title

Laser-Fabricated Reduced Graphene Oxide Memristors

Author

Francisco J. Romero , Alejandro Toral-Lopez, Akiko Ohata, Diego P. Morales, Francisco G. Ruiz, Andres Godoy, Noel Rodriguez

Year

2019

Journal

Nanomaterials

Abstract

Finding an inexpensive and scalable method for the mass production of memristors will be one of the key aspects for their implementation in end-user computing applications. Herein, we report pioneering research on the fabrication of laser-lithographed graphene oxide memristors. The devices have been surface-fabricated through a graphene oxide coating on a polyethylene terephthalate substrate followed by a localized laser-assisted photo-thermal partial reduction. When the laser fluence is appropriately tuned during the fabrication process, the devices present a characteristic pinched closed-loop in the current-voltage relation revealing the unique fingerprint of the memristive hysteresis. Combined structural and electrical experiments have been conducted to characterize the raw material and the devices that aim to establish a path for optimization. Electrical measurements have demonstrated a clear distinction between the resistive states, as well as stable memory performance, indicating the potential of laser-fabricated graphene oxide memristors in resistive switching applications.

Instrument

NRS-5100

Keywords

Raman imaging microscopy, memristor; graphene oxide; laser-scribing; neuromorphic; flexible electronics