The thickness of the epitaxial layer, substrate, etching (residual layer), liquid crystal cell gap, and other semiconductor layers dramatically impacts the semiconductor device performance. Management of the layer thickness during the manufacturing process is crucial in the production of large yields of stable devices.
The UTS-2000 film thickness measurement system is a non-destructive, non-contact analysis method using the latest interferometric technology to provide highly accurate film thickness measurement. Using a proprietary frequency analysis method, the sample interference spectrum is converted to a spatialgram and the film thickness calculated with a very high degree of accuracy. This integrated system offers film thickness measurements required by the exacting standards of the semiconductor industry including high-speed sample mapping, a wide thickness measurement range and supports a wide range of analysis requirements from process testing to R&D. The UTS-2000 can be configured with near-infrared or mid-infrared according to the thickness measurements required.
Film Thickness Measurements
Film thickness (substrate thickness) measurements from 0.25 to 750 µm.
Highly Accurate Film Thickness Measurements
Measurement of precision data using a high-accuracy interferometer and high throughput optics.
Support for Multi-Wafer Cassettes
Optional automated cassette sampling system for fully automated measurement of multi-wafer cassettes.
Simplified Operating System
Various conditions for measurement, mapping, and film thickness calculations are configured as preset methods and managed in a method table. Measurement of film thickness is initiated by simply selecting a required method from the table and clicking the ‘Measure’ button.