Title
Stimulation of n−π∗transition of g-C3N4 through ZnAl-layered double hydroxide for solar light assisted phenol degradation
Author
Alok Tripathi, Sheeba Narayanan
Year
2020
Journal
Materials Science in Semiconductor Processing
Abstract
The structural framework of graphitic carbon nitride (g-C3N4) was tuned with Zinc Aluminium layer double hydroxide (ZnAl-LDH), and its photocatalytic activity was investigated through solar light assisted phenol degradation of real effluent. The modified g-C3N4 (70%g-C3N4/ZnAl-LDH) possess more efficient inhibition of electron and hole pairs resulting in red shifting of absorption edge which stimulates the n−π∗ electronic transition. Morphological studies confirm that the LDH flocks consistently covered the g-C3N4 sheets affirming a substantial collaboration between two-layered material through electrostatic interlink and charge exchange synergy. Furthermore, 70%g-C3N4/ZnAl-LDH have an increased surface area of 26.292 m2/g and a reduced bandgap energy of 2.55 eV, which results in enhanced photocatalytic activity. The results of experimental study indicate that after 300 min of illumination in slight acidic condition, with 1.5 g/L chemical oxidant dose at 3 L/h reactor flowrate, 70%g-C3N4/ZnAl-LDH exhibits 79.35% degradation of phenol, and under same conditions, g-C3N4 confers 61.25% degradation.
Instrument
V-730, FP-8500
Keywords
Absorption, Diffuse reflectance, Band gap, Fluorescence, Photoluminescence, Seminconductor, Materials