Title
Enhance the Properties of BiI3-Based Resistive Switching Devices via Mixing Ag and Au Electrodes
Author
Chia-Shuo Li, Yu-Tien Wu, Po-Feng Lin, Bo-You Chen, Fang-Yu Fu, Ju-Feng Cheng, Yu-Song Chang, I-Chih Ni, Yu-Kuei Hsu, Yi-Hao Pai, Mei-Hsin Chen
Year
2023
Journal
Advanced materials
Abstract
The correlation between the electrodes and the properties of the BiI3 device is systematically investigated. The X-ray and UV photoemission spectroscopies are carried out to study the chemical state and electronic structure of the metal/BiI3 interfaces formed by the in-situ deposition of BiI3 on the metal. This revealed the upward diffusion of Ag and the self-formation of a conductive filament; the latter is further confirmed via tunneling electron microscopy. By coating the Au substrate with Ag layers of various thicknesses as a buffer layer, the morphology, surface roughness, chemical states, and quantity of the filament in the BiI3 layer can be manipulated. The device with the structure of Au/10 nm Ag/BiI3/Au demonstrated an ultrahigh on/off ratio of 109, good retention of 104 s, and multistate data storage. This study provides not only a fundamental insight into the interaction of BiI3 with metal, which will be helpful to design resistive switching devices and optoelectronics based on BiI3 material, but also a facile method to control the quantity of conductive filament in the BiI3 layer.
Instrument
V-670
Keywords
BiI3-Based Resistive Switching Devices, optoelectronics, layer, thickness