Evaluation of a Luminescent Semiconductor on the Nanometer Scale
August 23, 2022
Introduction
![Jasco NFS 310](https://jascoinc.com/wp-content/uploads/2013/10/Jasco-NFS-310.jpg)
Photoluminescence (PL) and electroluminescence (EL) measurements are standard techniques for evaluation of the crystallinity, functionality and luminescent mechanism of semiconductors. For these samples, near-field optical microscopy is the only effective method for characterization of the composition and distribution of luminescent centers on the nanometer scale.
In combination with a superconductive magnetic field, luminescent spectral measurements of the sample surface can be accomplished with nano-scale spatial resolution while applying temperatures as low as 7K and magnetic fields as high as 4 Tesla.
Luminescent Measurement of InGaN by NFS Series Scanning Near-Field Optical Microspectrometer
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![JASCO Application Note](https://jascoinc.com/wp-content/uploads/2023/10/app-pdf-header-2.png)
Evaluation of a Luminescent Semiconductor on the Nanometer Scale
Introduction
![Jasco NFS 310](https://jascoinc.com/wp-content/uploads/2013/10/Jasco-NFS-310.jpg)
Photoluminescence (PL) and electroluminescence (EL) measurements are standard techniques for evaluation of the crystallinity, functionality and luminescent mechanism of semiconductors. For these samples, near-field optical microscopy is the only effective method for characterization of the composition and distribution of luminescent centers on the nanometer scale.
In combination with a superconductive magnetic field, luminescent spectral measurements of the sample surface can be accomplished with nano-scale spatial resolution while applying temperatures as low as 7K and magnetic fields as high as 4 Tesla.