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Home / Applications / Infrared measurements with 1 µm spatial resolution

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Infrared measurements with 1 µm spatial resolution

By Heather Haffner

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May 7, 2024

Introduction

Combining near-field microscopy with infrared spectroscopy, the spatial resolution of infrared measurements are dramatically increased while maintaining the same powerful qualitative analysis capabilities of FT-IR spectroscopy. The measurement range of 4000 to 1000 cm-1 provides the majority of the mid-IR region. This system enables simultaneous measurements of the infrared spectrum and the 3-dimensional topography map. The figures below illustrate the measurement results for polystyrene beads on an aluminum (Al) mirror and an inorganic particle of ODS Silicon on a GaAs substrate.

This document has been prepared based on information available at the time of publication and is subject to revision without notice. Although the contents are checked with the utmost care, we do not guarantee their accuracy or completeness. JASCO Corporation assumes no responsibility or liability for any loss or damage incurred as a result of the use of any information contained in this document. Copyright and other intellectual property rights in this document remain the property of JASCO Corporation. Please do not attempt to copy, modify, redistribute, or sell etc. in whole or in part without prior written permission.

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About the Author

JASCO Application Note

Infrared measurements with 1 µm spatial resolution

Introduction

Combining near-field microscopy with infrared spectroscopy, the spatial resolution of infrared measurements are dramatically increased while maintaining the same powerful qualitative analysis capabilities of FT-IR spectroscopy. The measurement range of 4000 to 1000 cm-1 provides the majority of the mid-IR region. This system enables simultaneous measurements of the infrared spectrum and the 3-dimensional topography map. The figures below illustrate the measurement results for polystyrene beads on an aluminum (Al) mirror and an inorganic particle of ODS Silicon on a GaAs substrate.

This document has been prepared based on information available at the time of publication and is subject to revision without notice. Although the contents are checked with the utmost care, we do not guarantee their accuracy or completeness. JASCO Corporation assumes no responsibility or liability for any loss or damage incurred as a result of the use of any information contained in this document. Copyright and other intellectual property rights in this document remain the property of JASCO Corporation. Please do not attempt to copy, modify, redistribute, or sell etc. in whole or in part without prior written permission.
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