Atomic layer deposition of Al-doped ZnO thin films

By Tommi Tynell, Hisao Yamauchi, Maarit Karppinen, Ryuji Okazaki and Ichiro Terasaki

July 30, 2019

  • Year

  • Technique

  • Industry

Title

Atomic layer deposition of Al-doped ZnO thin films

Author

Tommi Tynell, Hisao Yamauchi, Maarit Karppinen, Ryuji Okazaki and Ichiro Terasaki

Year

2013

Journal

Journal of Vacuum Science & Technology A

Abstract

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2O3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2O3 phase and no further carrier doping of ZnO is observed

Full Article

https://pubs.acs.org/doi/abs/10.1021/cm101227h

Instrument

IRT-5000

Keywords

FTIR microscopy, Atomic layer deposition, ZnO films, alumina,