Designing of a novel p-MoS2@n-ZnIn2S4 heterojunction based semiconducting photocatalyst towards photocatalytic HER

July 30, 2020

Title

Designing of a novel p-MoS2@n-ZnIn2S4 heterojunction based semiconducting photocatalyst towards photocatalytic HER

Author

Gayatri Swain, Kulamani Parida

Year

2020

Journal

Materials Proceedings: Today

Abstract

Nowadays the blossoming interest has been paid for efficient hydrogen production which is promising candidates towards clean energy and a sustainable environment. With regards visible light photocatalysis system satisfying the realms of energy demands which has witnessed an environmental impact. On behalf of this, the choice of a suitable photocatalytic system becoming an urgent issue. Inspired by the advantages of p-n heterojunction photocatalytic system over the above obstacles, herein we have demonstrated MoS2/ZnIn2S4 system as the p-n heterojunction composite photocatalyst by adopting a one-step simple hydrothermal method. The products obtained were summarized through various physicochemical as well as electrochemical characterizations. From the Mott-Schottky analysis, the p and n characteristics of MoS2 and ZnIn2S4 have been proved. The photocatalytic activity of the as-obtained photocatalysts has been tested towards H2 evolution under visible light irradiation. From the experiment, it has been revealed that with only 1% MoS2 content, MoS2/ZnIn2S4 heterojunction photocatalysts exhibited a hydrogen evolution rate of 320.2 μmol/h which is 10 times higher than the neat ZnIn2S4 (32 μmol/h) respectively. The enhanced photocatalytic activity is due to the formation of a space charge region between the interfacial region of two components via the hydrothermal technique, which leads to an enhancement in the charge separation through the p–n heterojunction and thus modulating the photocatalytic activity.

Instrument

FP-8300

Keywords

Fluorescence, Photoluminescence, Materials