Title
In situ incorporation of laser ablated PbS nanoparticles in CH3NH3PbI3 films by spin-dip coating and the subsequent effects on the planar junction CdS/CH3NH3PbI3 solar cells
Author
Daniel Arturo Acuña Leal, Sadasivan Shajia, David Avellaneda Avellaneda, Josue Amilcar Aguilar Martínez, Bindu Krishnan
Year
2019
Journal
Applied Surface Science
Abstract
This is the first report on in situ incorporation of lead sulfide (PbS) nanoparticles in methyl ammonium perovskite thin films (CH3NH3PbI3:PbS) by the two step spin-dip method and the successive effects on the photovoltaic properties of HTM free Glass/FTO/CdS/CH3NH3PbI3 planar junctions. PbS nanocolloids of different concentrations were prepared by pulsed laser ablation of PbS target in isopropanol. CH3NH3PbI3:PbS thin films were synthesized by two step process of dipping spin coated PbI2 thin films in a dissolution of CH3NH3I in isopropanol containing PbS nanocolloids. Analysis on the structure, composition, morphology and optoelectronic properties of CH3NH3PbI3:PbS films with varying PbS nanoparticle concentrations were done and the results were compared with that of pristine CH3NH3PbI3 films. The CH3NH3PbI3:PbS films were of higher crystallinity with improved photocurrent sensitivity. The thin films were incorporated to HTM free p-n junction solar cells using chemical bath deposited CdS as window layer. The champion cell, Glass/FTO/CdS/CH3NH3PbI3:PbS showed Voc of 0.9 V, the highest value ever reported for HTM free p-n junction solar cell. Also, the device yielded Jsc of 7.76 mA/cm2, FF of 0.4 and a power conversion efficiency of 2.9%. The stability studies for 40 days evidenced that the champion device maintained the open circuit voltage unchanged.
Instrument
V-770
Keywords
Absorption, Optical properties, Band gap, Nanostructures, Solid state, Materials