Title
Electrical characteristics of MoS2 field-effect transistor with ferroelectric vinylidene fluoride-trifluoroethylene copolymer gate structure
Author
Takuhei Kobayashi1, Naoki Hori2, Takashi Nakajima3 and Takeshi Kawae2,a)
Year
2016
Journal
Applied Physics Letters
Abstract
Ferroelectric field-effect transistors (FeFET) based on MoS2 have recently been shown to exhibit considerable potential for use in nano sized non-volatile memory devices. Here, we demonstrated fabrication and characterization of FeFET based on MoS2 channel with vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer as back-gate insulator. In this device, counterclockwise hysteresis behavior was observed in the drain current–gate voltage curve, which is indicative of interaction between MoS2 carrier modulation and ferroelectricpolarization switching. Furthermore, our VDF-TrFE/MoS2 FeFET exhibited only n-type behavior, a maximum linear mobility of 625 cm2/V s, a large memory window width of 16 V, and a high on/off current ratio of 8 × 105.
Full Article
Instrument
NRS-4100
Keywords
Raman imaging microscopy, Ferroelectric, field-effect, non-volatile, memory, device