Title
Fabrication of high-photoresponsivity BaSi2 films formed on conductive layers by radio-frequency sputtering
Author
Ryota Koitabashi, Taira Nemoto, Masami Mesuda, Kaoru Toko and Takashi Suemasu
Year
2020
Journal
Applied Physics Express
Abstract
We fabricated randomly oriented polycrystalline BaSi2 films on TiN metal layers by sputtering for the deployment of BaSi2 solar cells on a flexible substrate. The formation of BaSi2 films was demonstrated by X-ray diffraction and Raman spectroscopy. Photoresponsivity increased at wavelengths <1000 nm, corresponding to the band gap of BaSi2, and reached 1.6 A W−1 at a wavelength of 650 nm under a bias voltage of 0.5 V applied to the front ITO electrode with respect to the TiN layers. This value is equivalent to the highest value ever achieved for undoped BaSi2 epitaxial films grown by MBE.
Instrument
NRS-5100
Keywords
Raman imaging microscopy, polycrystalline BaSi2, sputtering