Title
Formation of high-photoresponsivity BaSi2 films on glass substrate by radio-frequency sputtering for solar cell applications
Author
Ryota Koitabashi, Taira Nemoto, Yudai Yamashita, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Year
2020
Journal
Journal of Physics D: Applied Physics
Abstract
The formation of high-photoresponsivity semiconducting films composed of earth-abundant elements on a SiO2 substrate is of particular importance for large-scale deployment of solar cells. We investigated the deposition of high-photoresponsivity BaSi2 films by radio-frequency sputtering on indium-tin-oxide (ITO), Ti, or TiN electrodes formed on a SiO2 substrate. Raman spectroscopy and x-ray diffraction measurements revealed the formation of randomly oriented polycrystalline BaSi2 films only on TiN/SiO2 substrates at 570–650 °C. In contrast, impurity phases such as Ba oxides and TiSi2 were included when ITO and Ti layers were used, respectively. The photoresponsivity of the BaSi2 films on TiN electrodes reached 1.1 A W-1 at a wavelength of 790 nm under a bias voltage of 0.5 V applied between the front ITO and bottom TiN electrodes. This value is equivalent to the highest ever achieved for BaSi2 epitaxial films on Si(111) substrates by molecular beam epitaxy.
Instrument
NRS-5100
Keywords
Raman spectroscopy,