Iron Doped CdSe Films with Improved Photosensitivity and Stability for Use in a Liquid Junction Solar Cell
Atanu Jana, Mukul Hazra, Jayati Datta
ACS Applied Energy Materials
In the present investigation, transition metal Fe has been introduced in low levels in the CdSe matrix to formulate CdFeSe films for application in photoelectrochemical solar cells. Periodic voltammetry was employed to deposit the ternary films on FTO glass. Spectral characteristics, morphology, and composition of the matrices were determined by the respective physiochemical methods. The band gap energies of CdFeSe thin films were increased with the increase of Fe content. Electrochemical impedance spectroscopy, chronoamperometry, and photosensitivity of the film matrices were studied. In order to derive the functional parameters at the anode–electrolyte interface, the cell configuration, FTO/CdFeSe/S2––Sx2–/Pt, coupled with calomel reference electrode was used. Anodic stripping voltammetry was employed to investigate the inherent stability of the film matrices. The performance screening of the films ultimately indicates the best output in terms of photoconversion efficiency (η, %), fill factor (FF, %), and durability, at an optimal Fe content in the matrix.
Optical properties, Solid state, Band gap, Semiconductors, Materials